The Department of Applied Sciences discusses a master's thesis on the verification of porous silicon as a vacuum sensor

 The Department of Applied Sciences at the University of Technology discussed a master's thesis tagged

 Validation of porous silicon as a vacuum sensor.

An investigation of porous silicon as a vacuum sensor

The thesis of graduate student Noor Salman Daoud, specializing in laser applications and technology, included the preparation of porous silicon samples using the Photo electrochemical etching technique (PECE).

The silicon wafer was of the donor type with different etching times and the morphological characteristics were verified through FESEM. The increase in the pore size with the increase in the etching time where the pore sizes ranged from (0.1-0.9µm) and the surface roughness was studied by atomic force microscope AFM where the roughness increased from 5.666 -24.94nm)) The porosity % was studied by the gravimetric method and the maximum porosity was obtained 87% at etching time of 90 min. The optical properties were studied by photoluminescence technique, and it was observed that the intensity of porous silicon increased with the increase of etching time, which led to an increase in the energy gap ranging from 1.938-1.982eV compared to the silicon bandgap ranging (1.12eV) and the samples were verified as a vacuum sensor from During the measurement of electrical resistance, where the value of the electrical resistance decreases as the value of the vacuum (vacuum) increases, as the vacuum technology enters in many physical, chemical and mechanical applications, including drying foods and in the pharmaceutical industry, distillation, esterification process, deposition of thin films and others.

The discussion committee consisted of prof. Dr. Alwan Muhammad Alwan, Chairman and membership of each of a Dr. Ali Ahmed Youssef and Dr Doaa Suleiman Jubeir and the supervision of each of Dr. Mahdi Qassem Zayer and    prof. Dr. Muslim Fadel Jawad.